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The Effect of Power Density on Diffusion Length and Energy Gap of a-Si:H and nc-Si:H Thin Films Prepared by PECVD Technique The Effect of Power Density on Diffusion Length and Energy Gap of a-Si:H and nc-Si:H Thin Films Prepared by PECVD Technique
OLISH ACAD SCIENCES INST PHYSICS, AL LOTNIKOW 32-46, PL-02-668 WARSAW, POLAND |
Article In Journal |
1433 |
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